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IRL510PBF +BOM

Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB - Bulk

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IRL510PBF General Description

N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB

IRL510PBF

Key Features

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Logic-level gate drive
  • RDS(on) specified at VGS = 4 V and 5 V
  • 175 °C operating temperature
  • Fast switching
  • Ease of paralleling

    • Specifications

    Product Category MOSFET REACH Details
    Technology Si Mounting Style Through Hole
    Transistor Polarity N-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 5.6 A
    Rds On - Drain-Source Resistance 540 mOhms Vgs - Gate-Source Voltage - 10 V, + 10 V
    Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 6.1 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
    Pd - Power Dissipation 43 W Channel Mode Enhancement
    Configuration Single Fall Time 18 ns
    Product Type MOSFET Rise Time 47 ns
    Factory Pack Quantity 1000 Subcategory MOSFETs
    Transistor Type 1 N-Channel Typical Turn-Off Delay Time 16 ns
    Typical Turn-On Delay Time 9.3 ns Part # Aliases IRL510PBF-BE3
    Unit Weight 0.068784 oz

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