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IRGP35B60PDPBF

Transistor IGBT Chip N-Channel 600V 60A 308W 3-Pin TO-247AC Tube

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IRGP35B60PDPBF General Description

The IRGP35B60PDPBF is a 35A, 600V insulated gate bipolar transistor (IGBT) in a TO-247AC package. It features a low Vce(on) of 1.85V, making it highly efficient for medium-power switching applications. The device is optimized for hard switching applications such as power factor correction (PFC), uninterruptible power supplies (UPS), and motor control.The IGBT has a short-circuit rating of 6µs, allowing for reliable protection against faults in high-power systems. It also has a high di/dt tolerance, making it suitable for applications with fast switching speeds. The device has a maximum junction temperature of 175°C, ensuring its reliability in high-temperature environments.The IRGP35B60PDPBF is designed with advanced trench processing technology, which enhances its performance and efficiency. It has a low switching loss and a high short-circuit current rating, making it a dependable choice for demanding industrial applications.

irgp35b60pdpbf irgp35b60pdpbf

Key Features

  • 600V Ultrafast 35A IGBT
  • High speed switching
  • Low VCE(sat)
  • Positive temperature coefficient
  • Low switching losses
  • Soft recovery diode
  • Ultra low VCE(on)
  • High input impedance
  • RoHS compliant
  • Designed for high frequency power switching applications
irgp35b60pdpbf irgp35b60pdpbf

Application

  • Power supplies
  • Motor control circuits
  • Switching circuits
  • Industrial inverters
  • Automotive applications
  • Wind turbines
  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • Power factor correction circuits
  • Induction heating systems

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.85 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 60 A
Pd - Power Dissipation 308 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Continuous Collector Current Ic Max 60 A
Gate-Emitter Leakage Current 100 nA Height 20.7 mm
Length 15.87 mm Product Type IGBT Transistors
Factory Pack Quantity 400 Subcategory IGBTs
Width 5.31 mm Unit Weight 1.340411 oz

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B**O 12/27/2020

The goods received exactly 200 pieces as ordered, selectively checked 2 pieces. I ordered 44 pieces for the lantern there.

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