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IRFP3415PBF
N-Channel 150 V 43A (Tc) 200W (Tc) Through Hole TO-247AC
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Manufacturer:
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Mfr.Part #:
IRFP3415PBF
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Datasheet:
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Series:
HEXFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
150 V
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EDA/CAD Models:
Availability: 5392 PCS
Please fill in the short form below and we will provide you the quotation immediately.
IRFP3415PBF General Description
N-Channel 150 V 43A (Tc) 200W (Tc) Through Hole TO-247AC
Key Features
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry standard through-hole power package
- High current rating
- Increased ruggedness
- Wide availability from distribution partners
- Industry standard qualification level
- High performance in low frequency applications
- Standard pinout allows for drop in replacement
- High current carrying capability
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | HEXFET® |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150 V | Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 42mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
FET Feature | - | Power Dissipation (Max) | 200W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IRFP3415 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
Product Category | MOSFET | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 150 V | Id - Continuous Drain Current | 43 A |
Rds On - Drain-Source Resistance | 42 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.8 V | Qg - Gate Charge | 200 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 200 W | Channel Mode | Enhancement |
Configuration | Single | Height | 20.7 mm |
Length | 15.87 mm | Product Type | MOSFET |
Factory Pack Quantity | 400 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 5.31 mm |
Unit Weight | 0.211644 oz |
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IRFP3415PBF Datasheet PDF
IRFP3415PBF PDF Preview
Availability: 5392 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $1.822 | $1.82 |
10+ | $1.585 | $15.85 |
30+ | $1.437 | $43.11 |
100+ | $1.284 | $128.40 |
500+ | $1.216 | $608.00 |
1000+ | $1.187 | $1,187.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IRFP3415PBF, guaranteed quotes back within 12hr.
good price, delivered in time, quality as described. good seller, 5+ !