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IRF6645TRPbF

MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IRF6645TRPbF
Datasheet:

IRF6645TRPbF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

100 V

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IRF6645TRPbF General Description

N-Channel 100 V 5.7A (Ta), 25A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SJ

Infineon Technologies Corporation Inventory

Key Features

Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Low parasitic (1-2 nH) inductance package
100% lead-free (No RoHS exemption)
Wide availability from distribution partners
Industry standard qualification level
High power density
Optimum thermal performance
Compact form factor
High efficiency
Environmentally friendly

Infineon Technologies Corporation Original Stock

Application

Power supplies
Isolated DC-DC converters

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	HEXFET®
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	5.7A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	35mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id	4.9V @ 50µA	Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	2.2W (Ta), 42W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IRF6645	Product Category	MOSFET
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	5.7 A	Rds On - Drain-Source Resistance	28 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	14 nC	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	42 W
Channel Mode	Enhancement	Tradename	DirectFET
Configuration	Single	Fall Time	5.1 ns
Height	0.7 mm	Length	4.85 mm
Product Type	MOSFET	Rise Time	5 ns
Factory Pack Quantity	4800	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	18 ns
Typical Turn-On Delay Time	9.2 ns	Width	3.95 mm
Unit Weight	0.017637 oz

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty

365-Day Product

Quality Guarantee

We promise to provide 365 days quality assurance service for all our products.

Ratings and Reviews

G**n 11/09/2023

Order delivered. The give 5 star.

G**n 09/02/2023

The order came relatively quickly. The seller put 51 pieces so i'm happy.

C**n 08/31/2021

All super, thank you and good luck to the seller!

S**l 04/12/2021

Everything is ok, diodes as in the photo, checked with a multimeter all the workers, tomorrow i will install in the microwave, later i will write about work. delivery within the norm.