This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IPD30N10S3L34ATMA1 +BOM

N-channel MOSFET

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IPD30N10S3L34ATMA1
Datasheet:

IPD30N10S3L34ATMA1 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

30A (Tc)
EDA/CAD Models:

Request Free CAD Models for IPD30N10S3L34ATMA1

IPD30N10S3L34ATMA1 Information

General Description

The IPD30N10S3L34ATMA1 is a state-of-the-art semiconductor built for automotive applications. With its N-channel enhancement mode and AEC Q101 qualification, this product is designed to meet the demanding requirements of automotive electronics. Its MSL1 rating and 175C operating temperature make it suitable for use in extreme conditions, while its RoHS compliance ensures it meets the latest environmental standards. The IPD30N10S3L34ATMA1 has been 100% avalanche tested, guaranteeing its reliability in high-stress applications. With a current capability of 180A, low power losses, and optimized gate charge, this product offers superior thermal efficiency. Its robust package and high reliability make it ideal for applications such as 48V inverters, 48V DC/DC converters, and HID lighting systems

Infineon Technologies Corporation Inventory

Key Features

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
100% Avalanche tested
highest current capability 180A
low switching and conduction power losses for high thermal efficiency
robust packages with superior quality and reliability
optimized total gate charge enables smaller driver output stages

Infineon Technologies Corporation Original Stock

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	31mOhm @ 30A, 10V	Vgs(th) (Max) @ Id	2.4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1976 pF @ 25 V	FET Feature	-
Power Dissipation (Max)	57W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Base Product Number	IPD30N10
RHoS	yes	PBFree	yes
HalogenFree	yes	Product Category	MOSFET
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	30 A	Rds On - Drain-Source Resistance	31 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1.2 V
Qg - Gate Charge	24 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	57 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Configuration	Single	Fall Time	3 ns
Height	2.3 mm	Length	6.5 mm
Product Type	MOSFET	Rise Time	4 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	18 ns
Typical Turn-On Delay Time	6 ns	Width	6.22 mm
Part # Aliases	IPD30N10S3L-34 SP000261248	Unit Weight	0.139332 oz
Package/Case	TO-252-3