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IPD30N10S3L34ATMA1

Trans MOSFET N-CH 100V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R

Manufacturer: Infineon Technologies Corporation
Mfr.Part #: IPD30N10S3L34ATMA1
Datasheet: IPD30N10S3L34ATMA1 Datasheet (PDF)
Package/Case: TO-252-3
Product Type: Thyristors
Lifecycle: Active
EDA/CAD Models: Request Free CAD Models for IPD30N10S3L34ATMA1

Email: [email protected]

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Tel: +852 95804164

IPD30N10S3L34ATMA1 General Description

Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting

Infineon Technologies Corporation Inventory

Key Features

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
100% Avalanche tested
highest current capability 180A
low switching and conduction power losses for high thermal efficiency
robust packages with superior quality and reliability
optimized total gate charge enables smaller driver output stages

Infineon Technologies Corporation Original Stock

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Mfr	Infineon Technologies
Series	OptiMOS™	Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status	Active	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	31mOhm @ 30A, 10V	Vgs(th) (Max) @ Id	2.4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1976 pF @ 25 V	FET Feature	-
Power Dissipation (Max)	57W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Supplier Device Package	PG-TO252-3-11
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	Base Product Number	IPD30N10
RHoS	yes	PBFree	yes
HalogenFree	yes	Manufacturer	Infineon
Product Category	MOSFET	RoHS	Details
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	30 A	Rds On - Drain-Source Resistance	31 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1.2 V
Qg - Gate Charge	24 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	57 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Brand	Infineon Technologies	Configuration	Single
Fall Time	3 ns	Height	2.3 mm
Length	6.5 mm	Product Type	MOSFET
Rise Time	4 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	18 ns	Typical Turn-On Delay Time	6 ns
Width	6.22 mm	Part # Aliases	IPD30N10S3L-34 SP000261248
Unit Weight	0.139332 oz