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HGTP7N60B3D +BOM

ROHS compliant IGBTs capable of handling 60W power with a current rating of 14A and voltage rating of 600V

Manufacturer:

Onsemi
Mfr.Part #:

HGTP7N60B3D
Datasheet:

HGTP7N60B3D Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
EDA/CAD Models:

Request Free CAD Models for HGTP7N60B3D

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HGTP7N60B3D General Description

The HGTP7N60B3D is a 600V N-channel IGBT power transistor manufactured by Fairchild Semiconductor. It is designed for high power switching applications, particularly in motor control, UPS systems, and welding equipment. This IGBT transistor has a continuous drain current rating of 7A, making it suitable for medium to high power applications. It also has a low gate threshold voltage of 3V, allowing for efficient operation with standard control circuits.The HGTP7N60B3D features a fast switching speed and low on-state voltage, reducing power losses and improving overall efficiency in power electronics applications. It is capable of handling high surge currents and has a rugged design for reliable performance in harsh environments.This IGBT transistor is housed in a TO-220 package for easy mounting and heat dissipation. It has a maximum junction temperature of 150°C and features built-in protection against overcurrent and overtemperature conditions.

Key Features

600V, 7A N-Channel IGBT
Low VCE(ON) and fast switching speed
High input impedance
Low gate charge
Low tail current
600V collector-emitter voltage
7A continuous collector current
3rd generation IGBT technology
TO-220AB package
Designed for high power applications

Application

Power supplies
Motor drives
Industrial applications
Lighting applications
Switch mode power supplies
Electric vehicles
Solar inverters
Uninterruptible power supplies
Wind power systems
High frequency circuits

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	1.8 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	14 A
Pd - Power Dissipation	60 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	HGTP7N60B3D
Continuous Collector Current	14 A	Continuous Collector Current Ic Max	14 A
Gate-Emitter Leakage Current	+/- 100 nA	Height	9.4 mm
Length	10.67 mm	Product Type	IGBT Transistors
Factory Pack Quantity	400	Subcategory	IGBTs
Width	4.83 mm	Part # Aliases	HGTP7N60B3D_NL
Unit Weight	0.063493 oz