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HGTG11N120CN +BOM

Insulated Gate Bipolar Transistor

Manufacturer:

Onsemi
Mfr.Part #:

HGTG11N120CN
Datasheet:

HGTG11N120CN Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Models:

Request Free CAD Models for HGTG11N120CN

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HGTG11N120CN General Description

The HGTG11N120CN sets a new standard for high voltage, high speed power IGBTs, offering exceptional performance and reliability. With its advanced trench gate technology, this IGBT delivers higher switching speeds and lower energy losses, while its TO-247 package allows for easy mounting and superior thermal performance. Whether it's motor control, inverters, or power supplies, the HGTG11N120CN is the perfect choice for demanding applications

Key Features

1200V, 11A IGBT for high power applications
Low VCE(sat) for reduced power dissipation
High operating junction temperature up to 175°C
Integrated anti-parallel diode
Soft switching capability for improved efficiency
RoHS compliant
Low switching losses for higher frequency operation

Application

Powerful motor control
Renewable energy solutions
Efficient industrial automation

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	2.1 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	43 A
Pd - Power Dissipation	298 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	HGTG11N120CN
Continuous Collector Current	55 A	Continuous Collector Current Ic Max	43 A
Gate-Emitter Leakage Current	+/- 250 nA	Height	20.82 mm
Length	15.87 mm	Product Type	IGBT Transistors
Factory Pack Quantity	150	Subcategory	IGBTs
Width	4.82 mm	Part # Aliases	HGTG11N120CN_NL
Unit Weight	0.225401 oz