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See Technical Specifications

FGD3N60LSDTM +BOM

IGBT, 600V, 3A, 1.2V, DPAK, Planar

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

FGD3N60LSDTM
Datasheet:

FGD3N60LSDTM Datasheet (PDF)
Voltage - Collector Emitter Breakdown (Max):

600 V
Current - Collector (Ic) (Max):

6 A
Current - Collector Pulsed (Icm):

25 A
Vce(on) (Max) @ Vge, Ic:

1.5V @ 10V, 3A
EDA/CAD Models:

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FGD3N60LSDTM General Description

With a focus on maximizing energy efficiency, the FGD3N60LSDTM IGBT from ON Semiconductor stands out as a reliable choice for applications requiring minimal conduction losses. Its innovative design ensures a very low On-Voltage Drop, catering to the needs of industries that prioritize performance and cost-effectiveness

Key Features

High Current Capability
Very Low Saturation Voltage : V_CE(sat) = 1.2 V at I_C = 3 A
High Input Impedance

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	-
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	6 A	Current - Collector Pulsed (Icm)	25 A
Vce(on) (Max) @ Vge, Ic	1.5V @ 10V, 3A	Power - Max	40 W
Switching Energy	250µJ (on), 1mJ (off)	Input Type	Standard
Gate Charge	12.5 nC	Td (on/off) @ 25°C	40ns/600ns
Test Condition	480V, 3A, 470Ohm, 10V	Reverse Recovery Time (trr)	234 ns
Operating Temperature	-	Mounting Type	Surface Mount
Base Product Number	FGD3N60

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Ratings and Reviews

o**n 09/30/2021

Great Company , Quality parts and great service!

G**n 05/23/2021

Thank you the goods received quickly, all the denominations correspond to my order

S**l 01/27/2021

Working capacity did not check but everything is intact

J**s 02/27/2020

I am extremely satisfied with my purchase of the H5ANAG6NCMR-XNC electronic components from Avaq. They are original, top-notch quality, and exactly as described. Highly recommended!