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Package Integrated Modules (PIM) with 1200V and 10A capabilities
ModuleManufacturer:
Mfr.Part #:
BSM10GP120
Other Name:
BSM10GP120BOSA1
Datasheet:
Product:
IGBT Silicon Modules
Configuration:
Hex
Collector- Emitter Voltage VCEO Max:
1.2 kV
Collector-Emitter Saturation Voltage:
2.4 V
EDA/CAD Models:
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The BSM10GP120 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies. This product offers enhanced ruggedness, low saturation voltage (VCE(sat)), and improved turn-off performance. It's designed for high-power applications, with a rating of 1200V and 10A. The BSM10GP120 is suitable for various industries, including power supplies, motor control, induction heating, welding equipment, medical equipment, industrial heating systems, battery chargers, solar inverters, electric vehicles, and power transmission systems. This versatile IGBT module is an excellent choice for those seeking a reliable power management solution. In summary, the BSM10GP120 is a powerful IGBT module that excels in high-power applications, providing enhanced ruggedness, low saturation voltage, and improved turn-off performance.
The BSM10GP120 IGBT Module from Infineon Technologies features:
This module is suitable for various applications such as power supplies, motor control, induction heating, welding equipment, medical equipment, industrial heating systems, battery chargers, solar inverters, electric vehicles, and power transmission systems.
According to the product information, the package type of BSM10GP120 is "MODULE".
According to the information, there is no mention of the pin count or specific functions for the BSM10GP120 IGBT Module. The module is a general-purpose IGBT device designed for high-power applications, with features like enhanced ruggedness, low VCE(sat), and improved turn-off performance. It appears that this module is intended to be used as a building block in various applications, rather than having specific pin functions or counts specified for it.
According to the product information, the manufacturer of the BSM10GP120 is Infineon Technologies. Infineon Technologies is a leading global developer and producer of semiconductor solutions. They specialize in microelectronics and focus on developing innovative technologies for various industries such as automotive, industrial power control, telecommunications, and more.
According to the provided information, the application areas of BSM10GP120 are:
Based on Infineon's product portfolio, equivalent products to BSM10GP120 could be:
These IGBT modules share similar specifications with the BSM10GP120, including voltage and current ratings. However, please note that exact equivalents may not exist, as each product has its unique features and applications.
Product Category: | IGBT Modules | Product: | IGBT Silicon Modules |
Configuration: | Hex | Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 2.4 V | Continuous Collector Current at 25 C: | 20 A |
Gate-Emitter Leakage Current: | 300 nA | Pd - Power Dissipation: | 100 W |
Minimum Operating Temperature: | - 40 C | Maximum Operating Temperature: | + 125 C |
Packaging: | Tray | Height: | 17 mm |
Length: | 107.5 mm | Maximum Gate Emitter Voltage: | 20 V |
Mounting Style: | Chassis Mount | Product Type: | IGBT Modules |
Factory Pack Quantity: | 10 | Subcategory: | IGBTs |
Technology: | Si | Width: | 45 mm |
Part # Aliases: | BSM10GP120BOSA1 SP000014914 BSM10GP120BOSA1 | Package/Case | Module |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $193.780 | $193.78 |
200+ | $74.991 | $14,998.20 |
500+ | $72.355 | $36,177.50 |
1000+ | $71.053 | $71,053.00 |
The prices above are for reference only.
High quality products, very good prices, items arrived quickly, very well packaged and exactly as described. My recommendation!