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BSC096N10LS5 +BOM

Compact and reliable switching component for modern electronics"

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

BSC096N10LS5
Datasheet:

BSC096N10LS5 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

45 mJ
EDA/CAD Models:

Request Free CAD Models for BSC096N10LS5

Email: [email protected]

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Tel: +852 95804164

BSC096N10LS5 General Description

Meet the BSC096N10LS5 OptiMOS™ 5 power MOSFET, the ultimate solution for your power management needs. Combining a high voltage rating of 100V with a low gate charge, this MOSFET excels in minimizing switching losses while maintaining optimal conduction efficiency. The SuperS08 package further enhances its performance, enabling seamless operation at elevated switching frequencies. Additionally, its low gate threshold voltage makes it compatible with microcontrollers, simplifying the overall design process. Whether you're working on chargers, adapters, or telecom systems, this MOSFET is sure to meet and exceed your expectations

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	45 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	72 A
Drain-source On Resistance-Max	0.0096 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-F8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Operating Temperature-Min	-55 °C
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	287 A
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	FLAT	Terminal Position	DUAL
Transistor Application	SWITCHING	Transistor Element Material	SILICON