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2SC3668-Y,T2F(M
Bipolar (BJT) Transistor NPN 50 V 2 A 100MHz 1 W Through Hole MSTM
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Manufacturer:
Toshiba Semiconductor and Storage
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Mfr.Part #:
2SC3668-Y,T2F(M
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Datasheet:
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Transistor Type:
NPN
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Current - Collector (Ic) (Max):
2 A
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Voltage - Collector Emitter Breakdown (Max):
50 V
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Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 1A
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EDA/CAD Models:
Availability: 9775 PCS
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2SC3668-Y,T2F(M General Description
Bipolar (BJT) Transistor NPN 50 V 2 A 100MHz 1 W Through Hole MSTM
Specifications
Series | - | Transistor Type | NPN |
Current - Collector (Ic) (Max) | 2 A | Voltage - Collector Emitter Breakdown (Max) | 50 V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A | Current - Collector Cutoff (Max) | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 2V | Power - Max | 1 W |
Frequency - Transition | 100MHz | Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole | Base Product Number | 2SC3668 |
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Availability: 9775 PCS
+BOMQty. | Unit Price | Ext. Price |
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