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2N5566

Dual MOSFETs 40V 5mA

email Email: [email protected]
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2N5566 General Description

Transistor; Transistor Type:JFET; Breakdown Voltage, Vbr:-40V; Gate-Source Cutoff Voltage Max, Vgs(off):-3V; Power Dissipation, Pd:500mW; Continuous Drain Current, Id:30mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V ;RoHS Compliant: No

2n5566 2n5566
2n5566

Specifications

Product Category JFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Configuration Dual Vgs - Gate-Source Breakdown Voltage - 40 V
Gate-Source Cutoff Voltage - 3 V Drain-Source Current at Vgs=0 5 mA to 30 mA
Rds On - Drain-Source Resistance 100 Ohms Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Forward Transconductance - Min 0.0075 S
Operating Temperature Range - 55 C to + 150 C Product Type JFETs
Factory Pack Quantity 200 Subcategory Transistors
Type JFET

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Ratings and Reviews

More
S
S**l 07/22/2023

The press and the buttons of the switch are closer to 3 seconds.

18
N
N**s 05/22/2022

si, es lo solicitado

4
N
N**s 05/07/2022

The product arrived very early. I am satisfied with the good product.

10
J
J**n 04/18/2022

Voltage lights that pay provided, if V little may not be up express trial with mobile charger SS S7 good quality ความทน .. need long use before scrub

3

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