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ZXTP2012GTA +BOM
Bipolar Junction Transistors - BJT
TO-261-4,TO-261AA-
Manufacturer:
Diodes Incorporated
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Mfr.Part #:
ZXTP2012GTA
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Datasheet:
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Transistor Type:
PNP
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Current - Collector (Ic) (Max):
5.5 A
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Voltage - Collector Emitter Breakdown (Max):
60 V
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Vce Saturation (Max) @ Ib, Ic:
250mV @ 500mA, 5A
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EDA/CAD Models:
Availability: 7825 PCS
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ZXTP2012GTA General Description
Bipolar (BJT) Transistor PNP 60 V 5.5 A 120MHz 3 W Surface Mount SOT-223-3
Key Features
- Extremely low equivalent on-resistance; RSAT = 39mV at 5A
- 5.5 amps continuous current
- Up to 15 amps peak current
- Very low saturation voltages
- Excellent gain characteristics specified up to 10 Amps
Specifications
Transistor Type | PNP | Current - Collector (Ic) (Max) | 5.5 A |
Voltage - Collector Emitter Breakdown (Max) | 60 V | Vce Saturation (Max) @ Ib, Ic | 250mV @ 500mA, 5A |
Current - Collector Cutoff (Max) | 20nA (ICBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 1V |
Power - Max | 3 W | Frequency - Transition | 120MHz |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | ZXTP2012 |
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In Stock: 7,825
Minimum Order: 1
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