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ZXTDB2M832TA +BOM

Bipolar Transistors - BJT 20V Dual 3X2 MLP

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ZXTDB2M832TA General Description

Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 20V 4.5A, 3.5A 140MHz, 180MHz 1.7W Surface Mount 8-MLP (3x2)

Key Features

  • Low Equivalent On Resistance
  • Low Saturation Voltage (150mV max @1A--NPN)
  • HFE specified up to 6A
  • IC = 4.5A Continuous Collector Current
  • 3mm x 2mm MLP

Application

DC - DC Converters |Charging circuits |Power switches |Motor control

Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN, PNP Configuration Dual
Collector- Emitter Voltage VCEO Max 20 V Collector- Base Voltage VCBO 40 V, 25 V
Emitter- Base Voltage VEBO 7.5 V Maximum DC Collector Current 5 A, 3.8 A
Pd - Power Dissipation 3 W Gain Bandwidth Product fT 140 MHz, 180 MHz
Maximum Operating Temperature + 150 C Height 1 mm
Length 3 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Width 2 mm

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