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See Technical Specifications

ZXMN6A11GTA +BOM

60 Volt N-Channel MOSFET with 0.12 Ohm Resistance

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZXMN6A11GTA
Datasheet:

ZXMN6A11GTA Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for ZXMN6A11GTA

Email: [email protected]

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Tel: +852 95804164

ZXMN6A11GTA General Description

60V N-CHANNEL ENHANCEMENT MODE MOSFET Power Field-Effect Transistor, 4.4A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Key Features

Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	4.4 A
Rds On - Drain-Source Resistance	120 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	5.7 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	3.9 W	Channel Mode	Enhancement
Series	ZXMN6A1	Configuration	Single
Fall Time	4.6 ns	Forward Transconductance - Min	4.9 S
Height	1.65 mm	Length	6.7 mm
Product Type	MOSFET	Rise Time	3.5 ns
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	8.2 ns	Typical Turn-On Delay Time	1.95 ns
Width	3.7 mm	Unit Weight	0.003951 oz