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ZXMC10A816N8 +BOM

minimal gate drive needed for low on-resistance

Manufacturer:

diodes incorporated
Mfr.Part #:

ZXMC10A816N8
Datasheet:

ZXMC10A816N8 Datasheet (PDF)
Package/Case:

SO-8
Product Type:

Single FETs, MOSFETs
RoHS:
Lifecycle:

Active
EDA/CAD Models:

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ZXMC10A816N8 General Description

The ZXMC10A816N8 MOSFET stands out as a top choice for high efficiency, low voltage, and low power switching applications. With a maximum drain-source voltage rating of -80V and a continuous drain current rating of -1.6A, this MOSFET is well-suited for a diverse range of power management applications. Its low on-resistance of 0.65 ohms at a gate-source voltage of -4.5V ensures efficient power transfer with minimal voltage drop. Additionally, its fast switching speed, with a typical turn-on time of 4.5ns and a turn-off time of 28ns, allows for quick response times in switching applications. Encased in an SOT23-8 package, the ZXMC10A816N8 is compact and user-friendly, making it an excellent choice for space-constrained designs. Furthermore, it operates over a wide temperature range of -55°C to 150°C, guaranteeing dependable performance in various operating conditions. In conclusion, the ZXMC10A816N8 delivers a reliable and efficient solution for power management applications