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Bipolar (BJT) Transistor NPN - Darlington 160 V 1 A 250MHz 1 W Through Hole E-Line (TO-92 compatible)
TO-92Manufacturer:
Diodes Incorporated
Mfr.Part #:
ZTX601
Datasheet:
Configuration:
Single
Transistor Polarity:
NPN
Collector- Emitter Voltage VCEO Max:
160 V
Emitter- Base Voltage VEBO:
10 V
EDA/CAD Models:
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Bipolar (BJT) Transistor NPN - Darlington 160 V 1 A 250MHz 1 W Through Hole E-Line (TO-92 compatible)
Product Category | Darlington Transistors | Configuration | Single |
Transistor Polarity | NPN | Collector- Emitter Voltage VCEO Max | 160 V |
Emitter- Base Voltage VEBO | 10 V | Collector- Base Voltage VCBO | 180 V |
Maximum DC Collector Current | 1 A | Maximum Collector Cut-off Current | 10 nA |
Pd - Power Dissipation | 1 W | Mounting Style | Through Hole |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Series | ZTX601 | Continuous Collector Current | 1 A |
DC Collector/Base Gain hfe Min | 1000 at 50 mA at 10 V, 2000 at 500 mA at 10 V, 1000 at 1 A at 10 V | DC Current Gain hFE Max | 1000 |
Height | 4.01 mm | Length | 4.77 mm |
Product Type | Darlington Transistors | Factory Pack Quantity | 4000 |
Subcategory | Transistors | Width | 2.41 mm |
Unit Weight | 0.016000 oz |
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