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XP161A1355PR-G +BOM

N-Channel Metal-oxide Semiconductor Power Field-Effect Transistor

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

XP161A1355PR-G General Description

N-Channel 20 V 4A (Ta) 2W (Ta) Surface Mount SOT-89

Key Features

  • Low On-State Resistance : Rds (on)= 0.05Ω @ Vgs = 4.5V
  • : Rds (on)= 0.07Ω @ Vgs = 2.5V
  • : Rds (on)= 0.15Ω @ Vgs = 1.5V
  • Ultra High-Speed Switching
  • Gate Protect Diode Built-in
  • Driving Voltage : 1.5V
  • N-Channel Power MOSFET
  • DMOS Structure
  • Small Package : SOT-89
  • Environmentally Friendly : EU RoHS Compliant, Pb Free
  • APPLICATIONS
  • Notebook PCs
  • Cellular and portable phones
  • On-board power supplies
  • Li-ion battery systems

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 28 Weeks
Configuration SINGLE Drain Current-Max (ID) 4 A
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W Surface Mount YES
Terminal Finish TIN Time@Peak Reflow Temperature-Max (s) 10

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