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X28HC256JM-15 +BOM

Parallel EEPROM

Key Features

  • Access time: 70ns
  • Simple byte and page write
  • - Single 5V supply
  • - No external high voltages or VP-P control circuits
  • - Self-timed
  • - No erase before write
  • - No complex programming algorithms
  • - No overerase problem
  • Low power CMOS
  • - Active: 60mA
  • - Standby: 500µA
  • Software data protection
  • - Protects data against system level inadvertent writes
  • High speed page write capability
  • Highly reliable Direct Write™ cell
  • - Endurance: 1,000,000 cycles
  • - Data retention: 100 years
  • Early end of write detection
  • - DATA polling
  • - Toggle bit polling
  • Pb-free plus anneal available (RoHS compliant)

Specifications

Part Life Cycle Code Transferred Reach Compliance Code
Access Time-Max 150 ns Additional Feature 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION
Command User Interface NO Data Polling YES
Data Retention Time-Min 100 Endurance 1000000 Write/Erase Cycles
JESD-30 Code R-PQCC-J32 JESD-609 Code e0
Length 13.97 mm Memory Density 262144 bit
Memory IC Type EEPROM Memory Width 8
Number of Functions 1 Number of Terminals 32
Number of Words 32768 words Number of Words Code 32000
Operating Mode ASYNCHRONOUS Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C Organization 32KX8
Output Characteristics 3-STATE Page Size 128 words
Parallel/Serial PARALLEL Programming Voltage 5 V
Qualification Status Not Qualified Seated Height-Max 3.56 mm
Standby Current-Max 0.0005 A Supply Current-Max 0.06 mA
Supply Voltage-Max (Vsup) 5.5 V Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V Surface Mount YES
Technology CMOS Temperature Grade MILITARY
Terminal Finish Tin/Lead (Sn/Pb) Terminal Form J BEND
Terminal Pitch 1.27 mm Terminal Position QUAD
Toggle Bit YES Width 11.43 mm
Write Cycle Time-Max (tWC) 5 ms

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