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See Technical Specifications

W29N04GZBIBA +BOM

12MX8 flash memory module housed in a PBGA63 VFBGA-63 package

Manufacturer:

WINBOND ELECTRONICS CORP
Mfr.Part #:

W29N04GZBIBA
Datasheet:

W29N04GZBIBA Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for W29N04GZBIBA

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

W29N04GZBIBA General Description

Winbond's W29N04GZBIBA is a NAND flash memory chip designed to provide high-density, non-volatile storage solutions across consumer and industrial applications. With a likely 29nm technology node, 4Gb density, and specific part number "GZBIBA," this chip offers advanced features related to performance, power consumption, and interface compatibility. Its versatility makes it a suitable choice for smartphones, tablets, USB flash drives, and SSDs. For detailed technical specifications, including data transfer rate, interface protocol, and operating voltage, users can refer to the official datasheet provided by Winbond

Key Features

· Single 5-volt write (erase and program) operations
· Fast page-write operations
- 256 bytes per page
- Page write (erase/program) cycle: 5 mS (typ.)
- Effective byte-write (erase/program) cycle time: 19.5 mS
- Optional software-protected data write
· Fast chip-erase operation: 50 mS
· Two 16 KB boot blocks with lockout
· Page write (erase/program) cycles: 50K (typ.)
· Read access time: 70/90/120 nS
· Ten-year data retention
· Software and hardware data protection
· Low power consumption
- Active current: 25 mA (typ.)
- Standby current: 20 mA (typ.)
·Automaticwrite (erase/program) timing with internal VPP generation
· End of write (erase/program) detection
- Toggle bit
- Data polling
· Latched address and data
· All inputs and outputs directly TTL compatible
· JEDEC standard byte-wide pinouts
· Available packages: 32-pin 600 mil DIP, TSOP and PLCC

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8542.32.00.51	Date Of Intro	2017-02-09
JESD-30 Code	R-PBGA-B63	Length	11 mm
Memory Density	4294967296 bit	Memory IC Type	FLASH
Memory Width	8	Number of Functions	1
Number of Terminals	63	Number of Words	536870912 words
Number of Words Code	512000000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	512MX8	Parallel/Serial	PARALLEL
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Programming Voltage	1.8 V
Seated Height-Max	1 mm	Supply Voltage-Max (Vsup)	1.95 V
Supply Voltage-Min (Vsup)	1.7 V	Supply Voltage-Nom (Vsup)	1.8 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Form	BALL
Terminal Pitch	0.8 mm	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Type	SLC NAND TYPE
Width	9 mm