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See Technical Specifications

VCR2N +BOM

French Electronic Distributor since 1988

Manufacturer:

InterFET
Mfr.Part #:

VCR2N
Datasheet:

VCR2N Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for VCR2N

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

VCR2N General Description

The VCR2N JFET offers a current rating of 10mA and a gate-source breakdown voltage of -25V. With a gate-source cutoff voltage of -7V, this component is not compatible with leaded processes. Its Through Hole mounting type and on-resistance of 60ohm make it suitable for a variety of applications. Packaged in a TO-206AA case, please be aware that this product is not RoHS compliant

Application

AMPLIFIER

Specifications

Product Category	JFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Configuration	Single	Vds - Drain-Source Breakdown Voltage	10 V
Vgs - Gate-Source Breakdown Voltage	15 V	Gate-Source Cutoff Voltage	3.5 V
Rds On - Drain-Source Resistance	60 Ohms	Pd - Power Dissipation	300 mW
Series	VCR2N	Product Type	JFETs
Factory Pack Quantity	1	Subcategory	Transistors
Type	JFET	Unit Weight	0.114876 oz