This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

UPC2709TB-E3-A +BOM

Compact Power: Cellular-Grade Amplification in a Small Packag

Manufacturer:

RENESAS
Mfr.Part #:

UPC2709TB-E3-A
Datasheet:

UPC2709TB-E3-A Datasheet (PDF)
Frequency:

2GHz ~ 2.3GHz
Gain:

21dB ~ 26.5dB
Noise Figure:

5dB ~ 6.5dB
RF Type:

Cellular, DBS, PCS
EDA/CAD Models:

Request Free CAD Models for UPC2709TB-E3-A

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

UPC2709TB-E3-A General Description

Designed in a compact SOT-23 package, the UPC2709TB-E3-A offers easy integration into circuit board designs, ensuring seamless deployment in electronic systems. Its wide operating temperature range of -55°C to 150°C guarantees stability in various environmental conditions, making it a dependable choice for diverse applications. Whether it's enhancing the performance of mobile devices or optimizing RF power amplification, this transistor excels in delivering consistent and efficient operation

Key Features

High-density surface mounting : 6-pin super minimold package (2.0 1.25 0.9 mm)
Wideband response : fu = 2.3 GHz TYP. @3 dB bandwidth
Medium output power : PO (sat) = +11.5
= 1 GHz with external inductor
Supply voltage : VCC = 4.5 to 5.5 V
Power gain : GP = 23 dB TYP. @f = 1 GHz
Port impedance : input/output 50 Ω

Application

1stIF amplifiers in DBS converters |RFstage buffer in DBStuners, etc.

Specifications

Frequency	2GHz ~ 2.3GHz	P1dB	-
Gain	21dB ~ 26.5dB	Noise Figure	5dB ~ 6.5dB
RF Type	Cellular, DBS, PCS	Voltage - Supply	4.5V ~ 5.5V
Current - Supply	19mA ~ 32mA	Test Frequency	1GHz
Mounting Type	Surface Mount