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TPN4R806PL
Trans MOSFET N-CH Si 60V 72A
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Manufacturer:
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Mfr.Part #:
TPN4R806PL
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Datasheet:
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Continuous Drain Current (ID):
72 A
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Drain to Source Breakdown Voltage:
60 V
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Drain to Source Resistance:
3.5 mΩ
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Drain to Source Voltage (Vdss):
60 V
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EDA/CAD Models:
Availability: 7523 PCS
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Key Features
- Characteristics
- Symbol
- Condition
- Value
- Unit
- Gate threshold voltage (Max)
- V
- th
- 2.5
- V
- Drain-Source on-resistance (Max)
- R
- DS(ON)
- GS
- 9.1
- mΩ
- Drain-Source on-resistance (Max)
- R
- DS(ON)
- GS
- 4.8
- mΩ
- Input capacitance (Typ.)
- C
- iss
- 2130
- pF
- Total gate charge (Typ.)
- Q
- g
- V
- GS
- 29
- nC
Specifications
Continuous Drain Current (ID) | 72 A | Drain to Source Breakdown Voltage | 60 V |
Drain to Source Resistance | 3.5 mΩ | Drain to Source Voltage (Vdss) | 60 V |
Gate to Source Voltage (Vgs) | 20 V | Max Junction Temperature (Tj) | 175 °C |
Max Operating Temperature | 175 °C | Number of Channels | 1 |
Power Dissipation | 104 W | Turn-Off Delay Time | 27 ns |
Turn-On Delay Time | 15 ns | Height | 900 µm |
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TPN4R806PL Datasheet PDF
TPN4R806PL PDF Preview
Availability: 7523 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
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