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TK160F10N1L
Power Field-Effect Transistor, 160A I(D), 100V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Manufacturer:
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Mfr.Part #:
TK160F10N1L
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Datasheet:
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Continuous Drain Current (ID):
160 A
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Drain to Source Breakdown Voltage:
100 V
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Drain to Source Resistance:
2 mΩ
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Drain to Source Voltage (Vdss):
100 V
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EDA/CAD Models:
Availability: 3033 PCS
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TK160F10N1L General Description
- Application Scope:DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers
- Polarity:N-ch
- Generation:U-MOSⅧ-H
- Internal Connection:Single
- AEC-Q101:Qualified
- RoHS Compatible Product(s) (#):Available
- Assembly bases:Japan
Key Features
- Assembly bases:3.5 V
- Assembly bases:3.7 mΩ
- Assembly bases:2.4 mΩ
- Assembly bases:10100 pF
- Assembly bases:122 nC
Specifications
Continuous Drain Current (ID) | 160 A | Drain to Source Breakdown Voltage | 100 V |
Drain to Source Resistance | 2 mΩ | Drain to Source Voltage (Vdss) | 100 V |
Gate to Source Voltage (Vgs) | 20 V | Max Junction Temperature (Tj) | 175 °C |
Max Operating Temperature | 175 °C | Number of Channels | 1 |
Power Dissipation | 375 W | Turn-Off Delay Time | 140 ns |
Turn-On Delay Time | 42 ns | Height | 3.9 mm |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Availability: 3033 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for TK160F10N1L, guaranteed quotes back within 12hr.
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