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STF16N65M5 +BOM

N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in TO-220FP package

Manufacturer:

STMicroelectronics
Mfr.Part #:

STF16N65M5
Datasheet:

STF16N65M5 Datasheet (PDF)
Series:

MDmesh™ V
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

650 V
EDA/CAD Models:

Request Free CAD Models for STF16N65M5

Email: [email protected]

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STF16N65M5 General Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Key Features

Worldwide best R_DS(on)
Higher V_DSSrating
High dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested

Specifications

Series	MDmesh™ V	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	299mOhm @ 6A, 10V	Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V	Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1250 pF @ 100 V	Power Dissipation (Max)	25W (Tc)
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Base Product Number	STF16