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SST113 +BOM

N-Channel FETs 55V 2mA

SST113 General Description

TRANSISTOR, JFET N SOT-23; Breakdown Voltage Vbr: -35V; Zero Gate Voltage Drain Current Idss Min: 2mA; Gate-Source Cutoff Voltage Vgs(off) Max: 3V; Transistor Case Style: TO-236; No. of Pins: 3 Pin; MSL: -; SVHC: No SVHC (15-Ju

Key Features

  • Low Cost
  • Automated Insertion Package
  • Low Insertion Loss
  • No Offset or Error Voltage Generated By Closed Switch
  • - Purely Resistive
  • - High Isolation Resistance From Driver
  • Fast Switching
  • Short Sample and Hold Aperture Time

Specifications

Pbfree Code No Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.21.00.95
Additional Feature LOW INSERTION LOSS Configuration SINGLE
Drain-source On Resistance-Max 100 Ω FET Technology JUNCTION
JESD-30 Code R-PDSO-G3 Number of Elements 1
Number of Terminals 3 Operating Mode DEPLETION MODE
Operating Temperature-Max 135 °C Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 0.36 W
Qualification Status Not Qualified Surface Mount YES
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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