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See Technical Specifications

SSM6N357R

Trans MOSFET N-CH Si 60V 0.65A Automotive T/R

Manufacturer:

Toshiba Semiconductor
Mfr.Part #:

SSM6N357R
Datasheet:

SSM6N357R Datasheet (PDF)
Pin Count:

6
Released Date:

Dec 27, 2022
Last Modified Date:

Mar 7, 2023 4:10 PM UTC
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SSM6N357R General Description

The SSM6N357R from Toshiba is a MOSFET with Continous Drain Current 0.65 A, Drain Source Resistance 800 to 2400 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 1.3 to 2 V. Tags: Surface Mount.

Key Features

60 V, 1.5 nC, N-Channel Enhancement Mode MOSFET
N-Channel
TSOP6F

Specifications

Pin Count	6	Released Date	Dec 27, 2022
Last Modified Date	Mar 7, 2023 4:10 PM UTC

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Ratings and Reviews

V**n 10/17/2022

It works perfectly. Very fast shipping. Thanks

M**r 05/06/2022

Order received. They look new, but when checking on the programmer in them there was something sewn. But it seems to have successfully erased, recorded, read.

L**e 01/09/2022

Big selection for a low price. And a very fast delivery.

L**e 11/07/2021

Everything matches! I recommend.