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RJK2075DPA-00#J5A

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

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N-Channel 200 V 20A (Ta) 65W (Ta) Surface Mount WPAK(3F) (5x6)

Low on-resistance
R_DS(on) = 0.054 Ω typ. (at I_D = 10 A, V_GS = 10 V, Ta = 25 °C)
Low leakage current
High speed switching

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	-
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	69mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	-	Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Vgs (Max)	±30V	Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	65W (Ta)
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	RJK2075	Product Category	MOSFET
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	20 A	Rds On - Drain-Source Resistance	54 mOhms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	38 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	65 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	34 ns	Height	mm
Length	mm	Product Type	MOSFET
Rise Time	33 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	49 ns	Typical Turn-On Delay Time	24 ns
Width	mm