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PUML1,115

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V 100mA, 200mA 230MHz 300mW Surface Mount 6-TSSOP

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PUML1,115 General Description

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V 100mA, 200mA 230MHz 300mW Surface Mount 6-TSSOP

Specifications

Series - Transistor Type 1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max) 100mA, 200mA Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms Resistor - Emitter Base (R2) 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V / 210 @ 2mA, 10V Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 1µA Frequency - Transition 230MHz
Power - Max 300mW Mounting Type Surface Mount
Base Product Number PUML1

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