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PMV30ENEAR

In Stock: 6,238

40 V, N-channel Trench MOSFET

Manufacturers:
Nexperia Semiconductor (NXP)
Mfr.Part#:
PMV30ENEAR
Package/Case:
SOT23-3
Product Type:
Single FETs, MOSFETs
RoHS:
Lifecycle:
Active
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PMV30ENEAR Information

Description

The PMV30ENEAR is a 40 V, N-channel Trench MOSFET from Nexperia, packaged in SOT-23. It features logic-level compatibility, an extended temperature range of up to 175°C, and electrostatic discharge (ESD) protection exceeding 2 kV HBM (class H2). The device is AEC-Q101 qualified. This MOSFET is suitable for various applications such as driver ICs, line drives, load switches, relay control, high-speed switching, and low-side drivers. Its trench technology provides improved performance and reliability. The PMV30ENEAR offers a compact SOT-23 package, making it ideal for space-constrained designs. Its high voltage rating and fast switching capabilities make it suitable for various industrial and automotive applications.

Features

According to the product information, the features of PMV30ENEAR are:

Logic-level compatible
Extended temperature range Tj = 175 °C
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)
AEC-Q101 qualified

These features make it suitable for various applications such as driver IC, line drive, load switcher, relay control, high-speed switch, low-side driver, switching solution, speedy line driver, load management, and more.

Package

The package type of PMV30ENEAR is SOT-23.

Manufacturer

The manufacturer of the PMV30ENEAR is Nexperia, a leading global provider of semiconductor components and solutions.

Applications

The PMV30ENEAR is suitable for various applications, including driver ICs, line drives, load switches, relay control, high-speed switches, low-side drivers, switching solutions, speedy line drivers, load management, driving relay circuits, fast line drivers, switch control, relay driver modules, high-speed signal drivers, and circuit switching.

Equivalent

Based on Nexperia's product information, some equivalent products to PMV30ENEAR are:

NXP PCA9548A
STMicroelectronics VFQ30N10E
ON Semiconductor NCV7384G
Texas Instruments TIP41C

Please note that these equivalents may have slightly different specifications or packaging.

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	Current - Continuous Drain (Id) @ 25°C	4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	30mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	11.7 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 20 V
FET Feature	-	Power Dissipation (Max)	710mW (Ta), 8.3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Package/Case	SOT23-3

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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