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See Technical Specifications

PMV30ENEAR +BOM

40 V, N-channel Trench MOSFET

Manufacturer:

NEXPERIA
Mfr.Part #:

PMV30ENEAR
Datasheet:

PMV30ENEAR Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

40 V
Current - Continuous Drain (Id) @ 25°C:

4.8A (Ta)
EDA/CAD Models:

Request Free CAD Models for PMV30ENEAR

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Tel: +852 95804164

PMV30ENEAR General Description

The PMV30ENEAR is a game-changer in the world of electric motors, offering a winning combination of power, efficiency, and durability. This high-power motor is equipped with cutting-edge technology to provide superior performance in a wide range of applications. Its compact design and high torque density make it a standout choice for industries requiring a robust and reliable solution

Key Features

Logic-level compatible
Extended temperature range Tj = 175 °C
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)
AEC-Q101 qualified

Application

Switching solution
Speedy line driver
Load management

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	Current - Continuous Drain (Id) @ 25°C	4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	30mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	11.7 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 20 V
FET Feature	-	Power Dissipation (Max)	710mW (Ta), 8.3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount