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MRFX1K80NR5

RF Power Field-Effect Transistor

email Email: [email protected]
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MRFX1K80NR5 General Description

RF FET TRANSISTOR, 179V, OM-1230; Drain Source Voltage Vds: 179V; Continuous Drain Current Id: -; Power Dissipation Pd: 3.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 400MHz; RF Transistor Case: OM-1230; No

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Key Features

Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
NXP Semiconductor Original Stock
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Specifications

f<sub>i(RF)</sub> [max] (MHz) 400 Number of pins 4
Amp Class AB Test Signal Pulse
Supply Voltage (Typ) (V) 65 Class AB
Die Technology LDMOS Thermal Resistance (Spec) (&#8451;/W) 0.06
P1dB (Typ) (dBm) 62.6 Security Status COMPANY PUBLIC
Frequency (Min-Max) (MHz) 1.8,400 Efficiency (Typ) (%) 75.7
Frequency Band (Hz) 1800000,400000000 Description Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
f<sub>i(RF)</sub> [min] (MHz) 1.8 P1dB (Typ) (W) 1800
Gain (Typ) (dB) 24.4 Power Gain (Typ) (dB) @ f (MHz) 24.4 @ 230
Frequency (Max) (MHz) 400 Frequency (Min) (MHz) 1.8
Frequency (Min-Max) (GHz) 0.0018000001 to 0.4 f<sub>range</sub> [max] (MHz) 400
f<sub>range</sub> [min] (MHz) 1.8 Rth(j-a) (K/W) 0.06
Matching unmatched Modes of Operation pulsed radio frequency signal
Image Thumbnail - OM-1230-4L, OM-1230G-4L Package Image

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Ratings and Reviews

More
B
B**O 09/20/2023

Shipping very fast thanks to sellersY. very satisfied. Until i checked in the work.Delivery is very fast. thanks to the seller.

2
D
D**n 09/02/2021

Very long sent and went more than 75 days, from april 30.

7
D
D**N 06/26/2021

Extracorporeal experience, i don't know what experience you don't specify,

13
L
L**m 05/09/2021

The goods were about a month. Looks all right. After use, i will add a review.

4

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MRFX1K80NR5 Datasheet PDF

Preliminary Specification MRFX1K80NR5 PDF Download

MRFX1K80NR5 PDF Preview

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Availability: 3686 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $370.684 $370.68
200+ $143.450 $28,690.00
500+ $138.409 $69,204.50
1000+ $135.919 $135,919.00

The prices below are for reference only.

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