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MRFE6VS25NR1 +BOM

MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2

MRFE6VS25NR1 General Description

TRANSISTOR, RF, 133V, TO-270-2; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

NXP Semiconductor Inventory

Key Features

Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
NXP Semiconductor Original Stock
NXP Semiconductor Inventory

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs Series -
Technology LDMOS Frequency 512MHz
Gain 25.4dB Voltage - Test 50 V
Current Rating (Amps) - Noise Figure -
Current - Test 10 mA Power - Output 25W
Voltage - Rated 133 V Mounting Type Surface Mount
Base Product Number MRFE6

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Ratings and Reviews

More
C
C**b 09/06/2023

Did arrive. five star given. Thanks.

19
M
M**l 06/21/2023

Thank you, received as in the description. I haven't checked yet, i'll add it later.

8
O
O**t 06/07/2023

You can't ask for more for the price they have. They are small leds, but they are very bright.Very good.

6
M
M**i 11/21/2022

Excellent value and quality ! AAA++++++++++++++++++++++++++

9

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MRFE6VS25NR1 Datasheet PDF

Preliminary Specification MRFE6VS25NR1 PDF Download

MRFE6VS25NR1 PDF Preview

In Stock: 7,157

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $22.398 $22.40
10+ $20.898 $208.98

The prices below are for reference only.