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MRF422

RF Bipolar Transistors 2-30MHz 150Watts 28Volt Gain 10dB

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MRF422 General Description

RF Transistor NPN 35V 20A 150W Chassis Mount 211-11, Style 2

mrf422 mrf422

Key Features

  • Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Efficiency = 40%,Minimum Gain = 10 dB
  • Intermodulation Distortion @ 150 W (PEP) —IMD = –30 dB (min.)
  • 100% Test for Load Mismatch at all Phase Angelswith 30:1 VSWR
  • Aerospace and Defense
  • ISM
mrf422

Application

  • Min Frequency: 2 MHz
  • Max Frequency: 30 MHz
  • Pout: 150 W
  • Gain: 10 dB
  • Efficiency: 40 %
  • Bias Voltage: 28 V

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors Series -
Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 35V
Frequency - Transition - Noise Figure (dB Typ @ f) -
Gain 13dB Power - Max 150W
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5A, 5V Current - Collector (Ic) (Max) 20A
Operating Temperature - Mounting Type Chassis Mount

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Ratings and Reviews

More
A
A**n 01/11/2024

We'll solder. Came 104 pcs shipping on horses for a very short time. Although paid for fast delivery.

14
C
C**n 03/07/2023

Thank you for the goods!

17
N
N**h 10/24/2022

Everything is ok! Delivery to rb about a month.

16
L
L**n 06/16/2022

Shipped immediately, flew in 12 days, normal layout of normal quality. Immediately went to work. No jambs found. I recommend.

4

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