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MR25H40MDFR +BOM

High capacity storage

MR25H40MDFR General Description

One of the key features of the MR25H40MDFR is its non-volatile memory technology, providing reliable data retention even in challenging environmental conditions. Unlike traditional EEPROM and Flash memory solutions, the ferroelectric material used in this module offers high endurance and fast write speeds, making it a superior choice for critical data storage applications

Key Features

  • No write delays
  • Unlimited write endurance
  • Data retention greater than 20 years
  • Automatic data protection on power loss
  • Fast, simple SPI interface, up to 50 MHz clock rate with MR20H40.
  • 3.0 to 3.6 Volt power supply range
  • Low-current sleep mode
  • Industrial (-40 to 85°C), Extended (-40 to 105°C), and AEC-Q100 Grade 1 (-40 to 125°C) temperature range options.
  • Available in 8-pin DFN or 8-pin DFN Small Flag, RoHS-compliant packages.
  • Direct replacement for serial EEPROM, Flash, and FeRAM
  • MSL Level

Specifications

Product Category MRAM Interface Type SPI
Memory Size 4 Mbit Organization 512 k x 8
Data Bus Width 8 bit Mounting Style SMD/SMT
Access Time 25 ns Supply Voltage - Min 3 V
Supply Voltage - Max 3.6 V Operating Supply Current 46.5 mA
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 125 C
Series MR25H40 Pd - Power Dissipation 600 mW
Product Type MRAM Factory Pack Quantity 4000
Subcategory Memory & Data Storage Unit Weight 0.001319 oz

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