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MPSH10-BP

RF Transistor NPN 25V 50mA 650MHz 350mW Through Hole TO-92

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MPSH10-BP General Description

RF Transistor NPN 25V 50mA 650MHz 350mW Through Hole TO-92

Specifications

Series - Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 650MHz
Noise Figure (dB Typ @ f) - Gain -
Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V
Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Base Product Number MPSH10

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