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MMRF5014HR5
WIDEBAND RF POWER GaN ON SiC TRANSISTOR, 1-2700 MHz, 125 W CW, 50 V
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Manufacturer:
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Mfr.Part #:
MMRF5014HR5
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Datasheet:
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Technology:
HEMT
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Frequency:
2.5GHz
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Gain:
18dB
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Voltage - Test:
50 V
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EDA/CAD Models:
Availability: 3336 PCS
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MMRF5014HR5 General Description
RF Mosfet 50 V 350 mA 1MHz ~ 2.7GHz 18dB @ 2.5GHz 125W NI-360H-2SB
Key Features
WIDEBAND RF POWER GaN ON SiC TRANSISTOR, 1-2700 MHz, 125 W CW, 50 VSpecifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs | Series | - |
Technology | HEMT | Frequency | 2.5GHz |
Gain | 18dB | Voltage - Test | 50 V |
Current Rating (Amps) | - | Noise Figure | - |
Current - Test | 350 mA | Power - Output | 125W |
Voltage - Rated | 125 V | Mounting Type | Chassis Mount |
Base Product Number | MMRF5014 |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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MMRF5014HR5 Datasheet PDF
MMRF5014HR5 PDF Preview
Availability: 3336 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for MMRF5014HR5, guaranteed quotes back within 12hr.
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