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See Technical Specifications

MJF31C

NPN Bipolar Power Transistor

Manufacturer:

onsemi
Mfr.Part #:

MJF31C
Datasheet:

MJF31C Datasheet (PDF)
Transistor Type:

NPN
Current - Collector (Ic) (Max):

3 A
Voltage - Collector Emitter Breakdown (Max):

100 V
Vce Saturation (Max) @ Ib, Ic:

1.2V @ 375mA, 3A
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MJF31C General Description

The Bipolar Power Transistor is designed for general purpose amplifier and switching applications. The MJF31C (NPN) and MJF32C (PNP) are complementary devices.

Key Features

Collector–Emitter Saturation Voltage
–V_CE(sat) = 1.2 Vdc (Max) @ I_C = 3.0 Adc
Collector–Emitter Sustaining Voltage
– V_CEO(sus) = 100 Vdc (Min)
High Current Gain – Bandwidth Product
f_T = 3.0 MHz (Min) @ I_C = 500 mAdc
UL Recognized, File #E69369, to 3500 VRMS Isolation
Pb-Free Packages are Available

Specifications

Series	-	Transistor Type	NPN
Current - Collector (Ic) (Max)	3 A	Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A	Current - Collector Cutoff (Max)	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3A, 4V	Power - Max	2 W
Frequency - Transition	3MHz	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	MJF31