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See Technical Specifications

MJ10009

NTE ELECTRONICS MJ10009 Bipolar (BJT) Single Transistor, NPN, 500 V, 175 W, 20 A, 40

Manufacturer:

NTE Electronics, Inc
Mfr.Part #:

MJ10009
Datasheet:

MJ10009 Datasheet (PDF)
Number of Pins:

3
Collector Emitter Breakdown Voltage:

500 V
Collector Emitter Voltage (VCEO):

500 V
Max Operating Temperature:

200 °C
EDA/CAD Models:

Request Free CAD Models for MJ10009

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MJ10009 General Description

SILICON NPN TRANSISTOR, 500V, 20A, TO-3; Transistor Polarity:NPN; No. of Pins:2Pins; Transistor Mounting:Through Hole; Operating Temperature Max:200°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:500V RoHS Compliant: Yes

Specifications

Number of Pins	3	Collector Emitter Breakdown Voltage	500 V
Collector Emitter Voltage (VCEO)	500 V	Max Operating Temperature	200 °C
Max Power Dissipation	175 W	Min Operating Temperature	-65 °C
Polarity	NPN	Series	SWITCHMODE
Transistor Type	NPN - Darlington	Current - Collector (Ic) (Max)	20 A
Voltage - Collector Emitter Breakdown (Max)	500 V	Vce Saturation (Max) @ Ib, Ic	3.5V @ 2A, 20A
Current - Collector Cutoff (Max)	5mA	DC Current Gain (hFE) (Min) @ Ic, Vce	40A @ 5A, 5V
Power - Max	175 W	Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)	Mounting Type	Through Hole