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See Technical Specifications

MB85R1001ANC-GE1

FRAM, 128KX8, Parallel, PDSO48

Manufacturer:

Fujitsu Components America, Inc
Mfr.Part #:

MB85R1001ANC-GE1
Datasheet:

MB85R1001ANC-GE1 Datasheet (PDF)
Memory Type:

Non-Volatile
Memory Format:

FRAM
Technology:

FRAM (Ferroelectric RAM)
Memory Size:

1Mbit
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MB85R1001ANC-GE1 General Description

Fram, 1M, Parallel, 3V, 48Tsop; Memory Type:Fram; Memory Size:1Mbit; Nvram Memory Configuration:128K X 8Bit; Ic Interface Type:Parallel; Access Time:100Ns; Memory Case Style:Tsop; No. Of Pins:48Pins; Supply Voltage Min:3V; Supply Rohs Compliant: Yes |Fujitsu MB85R1001ANC-GE1

Key Features

Operating power supply voltage - 3 to 3.6V
Data retention - 10 years
Input rising/falling time - 5ns
Input/output evaluation level - 2/0.8V
Output impedance - 50pF

Application

Computers & Computer Peripherals, Industrial

Specifications

Category	Integrated Circuits (ICs)MemoryMemory	Series	-
Memory Type	Non-Volatile	Memory Format	FRAM
Technology	FRAM (Ferroelectric RAM)	Memory Size	1Mbit
Memory Organization	128K x 8	Memory Interface	Parallel
Write Cycle Time - Word, Page	150ns	Access Time	150 ns
Voltage - Supply	3V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Base Product Number	MB85R1001
Product Category	F-RAM	Mounting Style	SMD/SMT
Interface Type	Parallel	Organization	128 k x 8
Supply Voltage - Min	3 V	Supply Voltage - Max	3.6 V
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 85 C
Moisture Sensitive	Yes	Operating Supply Voltage	3.3 V
Product Type	FRAM	Factory Pack Quantity	128
Subcategory	Memory & Data Storage	Unit Weight	0.012699 oz