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See Technical Specifications

K4T51163QQ-BCE6 +BOM

Manufacturer:

SAMSUNG
Mfr.Part #:

K4T51163QQ-BCE6
Datasheet:

K4T51163QQ-BCE6 Datasheet (PDF)
Package/Case:

FBGA
Product Type:

Memory ICs
EDA/CAD Models:

Request Free CAD Models for K4T51163QQ-BCE6

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Key Features

JEDEC standard 1.8V0.1V Power Supply

VDDQ = 1.8V0.1V

200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin

4 Banks

Posted CAS

Programmable CAS Latency: 3, 4, 5, 6

Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5

Write Latency(WL) = Read Latency(RL) -1

Burst Length: 4 , 8(Interleave/nibble sequential)

Programmable Sequential / Interleave Burst Mode

Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)

Off-Chip Driver(OCD) Impedance Adjustment

On Die Termination

Special Function Support

-PASR(Partial Array Self Refresh)

-50ohm ODT

-High Temperature Self-Refresh rate enable

Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < T CASE < 95 C

All of Lead-free products are compliant for RoHS

Application

The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.

Specifications

Product Category

Memory ICs

Service Policies and Others

After-Sales & Settlement Related

Payment

Payment Method

TT/Wire Transfer

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For alternative payment channels, please reach out to us at:

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Shipping & Packing

Shipping Method

Fedex

UPS

DHL

NTN

Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty

365-Day Product

Quality Guarantee

We promise to provide 365 days quality assurance service for all our products.

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In Stock: 5,938

Minimum Order: 1

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