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IRLR7807ZPBF

MOSFET 30V 1 N-CH HEXFET 13.8mOhms 7nC

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IRLR7807ZPBF General Description

Power Field-Effect Transistor, 30A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

Specifications

Series HEXFET® FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 43A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 780 pF @ 15 V Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount

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Availability: 7431 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $0.267 $0.27
200+ $0.104 $20.80
500+ $0.100 $50.00
1000+ $0.098 $98.00

The prices below are for reference only.

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