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IRFB260N
Power Field-Effect Transistor, 56A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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Manufacturer:
Infineon Technologies AG
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Mfr.Part #:
IRFB260N
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Datasheet:
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Polarity:
N
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RthJC max:
0.4 K/W
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Tj max:
175.0 °C
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VDS max:
200.0 V
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EDA/CAD Models:
Availability: 8041 PCS
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IRFB260N General Description
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Specifications
Polarity | N | RthJC max | 0.4 K/W |
Tj max | 175.0 °C | VDS max | 200.0 V |
VGS max | 20.0 V | Mounting | THT |
Ptot max | 380.0 W | RDS (on) max | 40.0 mΩ |
VGS(th) max | 4.0 V | VGS(th) min | 2.0 V |
ID max | 56.0 A | Operating Temperature max | 175.0 °C |
Operating Temperature min | -55.0 °C |
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Availability: 8041 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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Coli well protected: bubble envelope and static anti-electricity pouch