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See Technical Specifications

HMC8205BF10

0.3 or 0.4 GHz to 6 GHz, 35 W, GaN Power Amplifier

Manufacturer:

Analog Devices, Inc
Mfr.Part #:

HMC8205BF10
Datasheet:

HMC8205BF10 Datasheet (PDF)
feature-number-of-channels-per-chip:

1
feature-maximum-operating-frequency-mhz:

6000
feature-typical-power-gain-db:

28@6000MHz
feature-typical-output-power-range-dbm:

30 to 60

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

HMC8205BF10 General Description

The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.

Key Features

High P_SAT: 46 dBm
High power gain: 20 dB
High PAE: 38%
Instantaneous bandwidth: 0.3 GHz to 6 GHz
Supply voltage: V_DD = 50 V at 1300 mA
10-lead LDCC package

Application

Military jammers
Commercial and military radar
Power amplifier stage for wireless infrastructure
Test and measurement equipment

Specifications

feature-number-of-channels-per-chip	1	feature-maximum-operating-frequency-mhz	6000
feature-typical-3db-bandwidth-mhz		feature-typical-power-gain-db	28@6000MHz
feature-typical-noise-figure-db		feature-typical-output-power-range-dbm	30 to 60
feature-maximum-input-vswr		feature-maximum-output-vswr
feature-maximum-operating-supply-voltage-v	55	feature-maximum-supply-current-ma	1300(Typ)@50V
feature-packaging	Tray	feature-rad-hard
feature-pin-count	10	feature-cecc-qualified
feature-esd-protection		feature-escc-qualified
feature-military	No	feature-aec-qualified	No
feature-auto-motive	No	feature-p-pap	No
feature-eccn-code	3A001.b.2.a.4	feature-svhc
feature-svhc-exceeds-threshold	No