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See Technical Specifications

HMC349AMS8GE

0Hz~4GHz 50dB 1.2dB MSOP-8-EP RF Switches ROHS

Manufacturer:

Analog Devices
Mfr.Part #:

HMC349AMS8GE
Datasheet:

HMC349AMS8GE Datasheet (PDF)
Switch Configuration:

SPDT
Minimum Frequency:

0 Hz
Maximum Frequency:

4 GHz
Insertion Loss:

1.8 dB

Email: [email protected]

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Tel: +852 95804164

HMC349AMS8GE General Description

The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.

Key Features

Nonreflective, 50 Ω design
High isolation: 57 dB to 2 GHz
Low insertion loss: 0.9 dB to 2 GHz
High input linearity
- 1 dB power compression (P1dB): 34 dBm typical
- Third-order intercept (IP3): 52 dBm typical
High power handling
- 33.5 dBm through path
- 26.5 dBm terminated path

Application

Cellular/4G infrastructure
Wireless infrastructure
Mobile radios
Test equipment

Specifications

Product Category	RF Switch ICs	Switch Configuration	SPDT
Minimum Frequency	0 Hz	Maximum Frequency	4 GHz
Insertion Loss	1.8 dB	Off Isolation - Typ	47 dB
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 85 C
Mounting Style	SMD/SMT	Technology	GaAs
Series	HMC349A	Moisture Sensitive	Yes
Number of Switches	Dual	Operating Supply Current	1.2 mA
Pd - Power Dissipation	969 mW	Product Type	RF Switch ICs
Factory Pack Quantity	500	Subcategory	Wireless & RF Integrated Circuits
Supply Voltage - Max	5 V	Unit Weight	0.004938 oz