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HMC1118LP3DE +BOM

High Isolation, Silicon SPDT, Nonreflective Switch, 9 kHz to 13.0 GHz

HMC1118LP3DE General Description

Encased in a compact 3 mm × 3 mm surface mount LFCSP package, the HMC1118LP3DE is designed for ease of installation and space-saving benefits. Its small form factor makes it ideal for applications where size constraints are a consideration without compromising on performance

Key Features

  • Nonreflective 50 Ω design
  • Positive control: 0 V/3.3 V
  • Low insertion loss: 0.68 dB at 8.0 GHz
  • High isolation: 48 dB at 8.0 GHz
  • High power handling:
    • 35 dBm through path
    • 27 dBm terminated path
  • High linearity:
    • 1 dB compression (P1dB): 37 dBm typical
    • Input third-order intercept (IIP3): 62 dBm typical
  • ESD rating: 2kV human body model (HBM)
  • 3 x 3 mm, 16-Lead LFCSP Package
  • No low frequency spurious
  • Settling time (0.05 dB margin of final RFOUT): 7.5 μs

Application

  • Test instrumentation
  • Microwave radios and very small aperture terminals (VSATs)
  • Military radios, radars, and electronic counter measures (ECMs)
  • Fiber optics and broadband telecommunications

Specifications

Product Category RF Switch ICs Switch Configuration SPDT
Minimum Frequency 9 kHz Maximum Frequency 13 GHz
Insertion Loss 1.3 dB Off Isolation - Typ 25 dB
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 85 C
Mounting Style SMD/SMT Technology Si
Series HMC1118 High Control Voltage 2 V to 3.6 V
Moisture Sensitive Yes Number of Switches Dual
Off Time - Max 2.7 us On Time - Max 2.7 us
Operating Supply Current 20 uA Product Type RF Switch ICs
Factory Pack Quantity 500 Subcategory Wireless & RF Integrated Circuits
Supply Voltage - Max 3.6 V Supply Voltage - Min 3 V
Unit Weight 0.000847 oz

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