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GE10022
Bipolar (BJT) Transistor NPN - Darlington 240 V 40 A 250 W Through Hole TO-204AE
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Manufacturer:
Harris Corporation
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Mfr.Part #:
GE10022
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Datasheet:
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Transistor Type:
NPN - Darlington
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Current - Collector (Ic) (Max):
40 A
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Voltage - Collector Emitter Breakdown (Max):
240 V
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Vce Saturation (Max) @ Ib, Ic:
2.5V @ 1A, 20A
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EDA/CAD Models:
Availability: 9168 PCS
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GE10022 General Description
Bipolar (BJT) Transistor NPN - Darlington 240 V 40 A 250 W Through Hole TO-204AE
Specifications
Series | - | Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 40 A | Voltage - Collector Emitter Breakdown (Max) | 240 V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 1A, 20A | Current - Collector Cutoff (Max) | 250µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 10A, 5V | Power - Max | 250 W |
Frequency - Transition | - | Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
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Availability: 9168 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $4.875 | $4.88 |
200+ | $1.887 | $377.40 |
500+ | $1.820 | $910.00 |
1000+ | $1.788 | $1,788.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for GE10022, guaranteed quotes back within 12hr.