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FLL177ME

RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 2 PIN

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FLL177ME General Description

RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 2 PIN

Key Features

  • High Output Power: P1dB=29.5dBm (Typ.)
  • High Gain: G1dB=13.5dB (Typ.)
  • High PAE: ηadd=47% (Typ.)
  • Proven Reliability
  • Hermetically Sealed Package

Specifications

Pbfree Code Yes Part Life Cycle Code Transferred
Pin Count 2 Reach Compliance Code
ECCN Code EAR99 Additional Feature HIGH RELIABILITY
Case Connection SOURCE Configuration SINGLE
DS Breakdown Voltage-Min 15 V FET Technology JUNCTION
Highest Frequency Band L BAND JESD-30 Code R-CDFM-F2
Number of Elements 1 Number of Terminals 2
Operating Mode DEPLETION MODE Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Qualification Status Not Qualified
Surface Mount YES Terminal Form FLAT
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER Transistor Element Material GALLIUM ARSENIDE

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