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CY7C1011G30-12ZSXE
SRAM - Asynchronous Memory IC 2Mbit Parallel 10 ns 44-TSOP II
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Manufacturer:
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Mfr.Part #:
CY7C1011G30-12ZSXE
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Datasheet:
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Memory Type:
Volatile
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Memory Format:
SRAM
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Technology:
SRAM - Asynchronous
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Memory Size:
2Mbit
Availability: 5192 PCS
Please fill in the short form below and we will provide you the quotation immediately.
CY7C1011G30-12ZSXE General Description
SRAM - Asynchronous Memory IC 2Mbit Parallel 10 ns 44-TSOP II
Specifications
Category | Integrated Circuits (ICs)MemoryMemory | Series | - |
Memory Type | Volatile | Memory Format | SRAM |
Technology | SRAM - Asynchronous | Memory Size | 2Mbit |
Memory Organization | 128K x 16 | Memory Interface | Parallel |
Write Cycle Time - Word, Page | 10ns | Access Time | 10 ns |
Voltage - Supply | 2.2V ~ 3.6V | Operating Temperature | -40°C ~ 125°C (TA) |
Mounting Type | Surface Mount | Base Product Number | CY7C1011 |
feature-organization | feature-minimum-operating-supply-voltage-v | 2.2 | |
feature-maximum-access-time-ns | 12 | feature-process-technology | 65nm |
feature-maximum-operating-supply-voltage-v | 3.6 | feature-maximum-operating-current-ma | 50 |
feature-packaging | Tray | feature-rad-hard | |
feature-pin-count | 44 | feature-cecc-qualified | |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | Yes | feature-aec-qualified-number | AEC-Q100 |
feature-auto-motive | Yes | feature-p-pap | Yes |
feature-eccn-code | 3A991.b.2.b | feature-svhc | |
feature-svhc-exceeds-threshold | No |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Availability: 5192 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.727 | $0.73 |
200+ | $0.283 | $56.60 |
675+ | $0.272 | $183.60 |
1350+ | $0.267 | $360.45 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for CY7C1011G30-12ZSXE, guaranteed quotes back within 12hr.
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