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BLF888B +BOM

104V N-CH RF MOSFET with 5-Pin SOT-539A Package

BLF888B General Description

The BLF888B is a powerful RF Power Field-Effect Transistor designed for use in ultra high frequency bands. With its N-Channel Silicon Metal-oxide Semiconductor FET construction, this transistor offers superior performance and reliability for a variety of applications. The ceramic package ensures durability and thermal efficiency, making it ideal for demanding environments. Additionally, this product is RoHS compliant, meeting international standards for environmental sustainability

Key Features

  • The BLF888B is a high-power, NXP RF power transistor designed for use in broadcast and industrial applications
  • It operates in the frequency range of 470 to 860 MHz, with a maximum output power of 1
  • 2 kW
  • The transistor is characterized by its high efficiency, ruggedness, and low intermodulation distortion, making it suitable for demanding RF amplification tasks
  • Application

    • High power handling
    • Reliable RF performance
    • Efficient plasma generation

    Specifications

    ECCN (US) EAR99 Part Status Active
    Configuration Dual Common Source Channel Mode Enhancement
    Channel Type N Number of Elements per Chip 2
    Mode of Operation 2-Tone Class-AB|DVB-T Process Technology LDMOS
    Maximum Drain Source Voltage (V) 104 Maximum Gate Source Voltage (V) 11
    Maximum Drain Source Resistance (mOhm) 120(Typ)@6.15V Typical Input Capacitance @ Vds (pF) 210@50V
    Typical Reverse Transfer Capacitance @ Vds (pF) 1.35@50V Typical Output Capacitance @ Vds (pF) 67@50V
    Output Power (W) 250(Min) Typical Power Gain (dB) 21
    Maximum Frequency (MHz) 860 Minimum Frequency (MHz) 470
    Typical Drain Efficiency (%) 46 Minimum Operating Temperature (°C) -65
    Maximum Operating Temperature (°C) 200 Mounting Screw
    PCB changed 5 Pin Count 5

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