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104V N-CH RF MOSFET with 5-Pin SOT-539A Package
SOT-539AManufacturer:
Mfr.Part #:
BLF888B
Datasheet:
ECCN (US):
EAR99
Configuration:
Dual Common Source
Channel Mode:
Enhancement
Channel Type:
N
EDA/CAD Models:
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The BLF888B is a powerful RF Power Field-Effect Transistor designed for use in ultra high frequency bands. With its N-Channel Silicon Metal-oxide Semiconductor FET construction, this transistor offers superior performance and reliability for a variety of applications. The ceramic package ensures durability and thermal efficiency, making it ideal for demanding environments. Additionally, this product is RoHS compliant, meeting international standards for environmental sustainability
ECCN (US) | EAR99 | Part Status | Active |
Configuration | Dual Common Source | Channel Mode | Enhancement |
Channel Type | N | Number of Elements per Chip | 2 |
Mode of Operation | 2-Tone Class-AB|DVB-T | Process Technology | LDMOS |
Maximum Drain Source Voltage (V) | 104 | Maximum Gate Source Voltage (V) | 11 |
Maximum Drain Source Resistance (mOhm) | 120(Typ)@6.15V | Typical Input Capacitance @ Vds (pF) | 210@50V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 1.35@50V | Typical Output Capacitance @ Vds (pF) | 67@50V |
Output Power (W) | 250(Min) | Typical Power Gain (dB) | 21 |
Maximum Frequency (MHz) | 860 | Minimum Frequency (MHz) | 470 |
Typical Drain Efficiency (%) | 46 | Minimum Operating Temperature (°C) | -65 |
Maximum Operating Temperature (°C) | 200 | Mounting | Screw |
PCB changed | 5 | Pin Count | 5 |
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