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See Technical Specifications

BLF881,112

RF FET LDMOS 104V 21DB SOT467C

Manufacturer:

Ampleon USA Inc.
Mfr.Part #:

BLF881,112
Datasheet:

BLF881,112 Datasheet (PDF)
Technology:

LDMOS
Frequency:

860MHz
Gain:

21dB
Voltage - Test:

50 V
EDA/CAD Models:

Request Free CAD Models for BLF881,112

Email: [email protected]

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Tel: +852 95804164

BLF881,112 General Description

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

Key Features

2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:
Peak envelope power load power = 140 W
Power gain = 21 dB
Drain efficiency = 49 %
Third order intermodulation distortion = −34 dBc
DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:
Average output power = 33 W
Power gain = 21 dB
Drain efficiency = 34 %
Shoulder distance = −33 dBc (4.3 MHz from center frequency)
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Specifications

Series	-	Technology	LDMOS
Frequency	860MHz	Gain	21dB
Voltage - Test	50 V	Current Rating (Amps)	-
Noise Figure	-	Current - Test	500 mA
Power - Output	140W	Voltage - Rated	104 V
Mounting Type	Chassis Mount	Base Product Number	BLF881